THE CREATION OF BORON DEEP LEVELS BY HIGH TEMPERATURE ANNEALING OF 4H-SIC By
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منابع مشابه
Carrier Lifetime Relevant Deep Levels In SiC
Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act...
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It is shown experimentally that GeSi nanocrystals in SiC created after high-dose Ge ion implantation and high-temperature annealing are hexagonal in a hexagonal 4H-SiC matrix and are of cubic structure in a cubic 3C-SiC matrix. This interesting fact could be explained by molecular dynamics as the force of the system nanocrystal-matrix to minimize its interface energy.
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Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. Much progress has further been achieved in identifying minority charge carrier lifetime limiting defects, which may be attribute...
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At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-quality substrates will significantly improve device performance and yield. One of the aims of the...
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In this paper, the breakdown characteristic of 4H-SiC pn diode using Internal Ring(IR) termination technique is investigated. N-type 4H-SiC wafer having a 10um epilayer with a doping concentration of 5.4×10 15 /cm 3 was used to fabricate the pn diodes with one or two IRs. IR was formed by boron implantation of single energy of 360keV with 5×10 14 /cm 2 dose and activation annealing at 1700 o C ...
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